Abstract
Abstract The density of states in heavily doped, strongly compensated semiconductors in a strong magnetic field is calculated by using the path-integral method. The case when correlation exists in the impurity positions due to the Coulomb interactions between the charged donors and acceptors during the high-temperature preparation of the samples is considered. The semiclassical formula is rederived and corrections due to the long-range character of the impurity potential and its short-range fluctuations are obtained. The density of states in the tail is studied and analytical results are given for the classical and quantum cases.
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