Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells

Abstract

This paper presents silicon quantum dot channel (QDC) field effect transistors (FETs) and floating gate nonvolatile memory structures. The QDC-FET operation is explained by carrier transport in narrow mini-energy bands which are manifested in an array of SiOx-cladded silicon quantum dot layers. For nonvolatile memory structures, simulations of electron charge densities in the floating quantum dot layers are presented. Experimental threshold voltage shift in ID–VG characteristics is presented after the ‘Write’ cycle. The QDC-FETs and nonvolatile memory due to improved threshold voltage variations by incorporating the lattice-matched II–VI layer as the gate insulator.