Abstract
The investigations of correlation between intensity noise of semiconductor laser and junction voltage noise were made. The laser was high-power quantum well separate confinement heterostructure (SCH) InGaAsP/GaAs laser with (lambda) equals 0.8 micrometers . The full negative correlation near the threshold between photon flux noise and junction voltage noise in constant-current regime was obtained. It was shown that at room temperature the laser exhibited constant-current regime due to base resistance. The theoretical treatment of correlation coefficient versus pump current was proposed and the role of optical losses has been revealed. The comparison of theoretical and experimental behavior near the threshold were made.
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