Quantum ATK analysis of silicon nanowire FET with a cylindrical metallic wrap-around gate varied with dielectrics

Abstract

The nanowire FET is a game-changing technology because the gate is wrapped around the channel, allowing for greater applications for gate controllability and switching. The usage of dielectrics with the Nanowire Field Effect Transistor is discussed in this work. The device is investigated for three different dielectric constants using quantum ATK software. For each dielectric, sub-threshold conditions such as Drain induced barrier lowering, subthreshold slope, I ON and I OFF currents are investigated. For dielectric 4,9,25, the I ON /I OFF ratio was found to be 0.86 × 10 7 , 0.22 × 10 7 & 0.12 x10 7 for the described devices, respectively. The subthreshold slope for the same three dielectrics was calculated as 298.416 mV/dec, 285.8914 mV/dec & 190.66 mV/dec. Subthreshold conditions can be suppressed using the gate and drain control parameters. Many further evaluations are carried out to determine how we can employ the designed device for sensor applications.