Inverse Gaussian Doped Nanoscale Junctionless Gate All Around-based Biosensor

Abstract

This article discusses the electrical properties of an Inverse Gaussian Junctionless Gate All Around (IG-JLT-GAA) field effect transistor for identifying neutral and charged bioanalytes. In this work, the inverse Gaussian doping profile enables the potent command of gate over charge in channel in the GAA structure, resulting in improved performance attributes such as OFF current, ON current, current ratio, subthreshold slope, drain-induced barrier lowering, threshold voltage, and transconductance for the proposed biosensor. The leakage current (OFF) is 10−17 A, and the drain current (ON) is 10−6 A, with their ratio of 10−11 fetched at K = 10. This article investigates the effect of varying dielectric constants of biomolecules immobilized in cavity reflects the enhancement in biosensor sensitivity due to the immobilization of high dielectric constant protein bioanalytes. The drain-induced barrier lowering (DIBL) and subthreshold swing (SS) are 4.4 mV/V and 60.6688 mV/dec, respectively, for K = 10. The estimated threshold voltage sensitivity (SVT ) for various dielectric constant biomolecules was found to be 9.7 and 110.5 mV for K = 1 and K = 10, respectively. Further, the performance of the biosensor using well-known biotin biomolecules with K = 2.63 is studied, and the result shows that the biosensor performs outstandingly in all performance attributes required for the detection of charged and neutral biomolecules.