Abstract
A dielectric modulated MOS-HEMT is investigated for different neutral and charged biomolecules with cavities embedded on the source side. To analyze the performance of the device, neutral and charged biomolecules are immobilized in the cavity independently. The neutral biomolecules are emulated by dielectric constant in the cavity and the charged biomolecules are emulated by varying interface charge at oxide/AlGaN interface. The proposed structure is simulated using the ATLAS Silvaco device simulation tool. The sensitivity of the device is optimized by various parameters such as barrier mole fraction and cavity length. The performance of the device is evaluated by the change in drain current and shift in threshold voltage. It has been observed that the drain current and threshold voltage varies with dielectric modulation of the cavity and change in biomolecular charge. The effect of neutral and charged biomolecules is also analyzed for channel potential and channel conductance. As observed from the results, the variation in $$\mathrm {g}_{\mathrm {d}}$$ due to neutral biomolecules is very high as compared to charged biomolecules. It shows very less variation in $$\mathrm {g}_{\mathrm {d}}$$ for charged ranges from $$3\times 10^{12}/\mathrm {cm}^2$$ to $$-5\times 10^{11}/\mathrm {cm}^2$$ .
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