Abstract
We report the first quantitative experimental two-dimensional (2D) dopant profile measurement of 0.35 μm transistors with lightly doped drain structures and its comparison with theoretical simulation. Experimentally, the 2D dopant profile is determined using dopant-selective etching followed by atomic force microscopy imaging. These results show excellent quantitative agreement with recent theoretical profile simulation for both n- and p-channel metal–oxide–semiconductor transistors.
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