Abstract
The potential of combined use of conventional transmission electron microscopy (CTEM), high-resolution TEM imaging (HRTEM) and digital analysis is applied to study (Si,Ge) islands grown by liquid phase epitaxy (LPE) on Si substrates and Ga(Sb,As) quantum dot (QDs) structures grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates. The classical diffraction contrast method is applied to visualize the strain field in the surrounding of the QDs. Dark-field imaging allows a qualitative imaging of chemical composition using chemically sensitive reflections. Furthermore, it will be presented how the techniques of quantitative HRTEM (qHRTEM) can be used to determine the local strain and structural peculiarities on atomic scale.
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