Abstract
AbstractIn this work the growth of currentline‐oriented pores (curro pores) in (100) n‐type InP has been investigated on substrates of different doping concentration ND. Additionally, Fast‐Fourier‐Transform Impedance Spectroscopy (FFT IS) has been performed in‐situ during the etching. In the framework of the developed model of curro pore growth it was possible to extract quantitative data, which were hitherto not retrievable in‐situ. These data include the potential drop in the space‐charge‐region at the pore tips USCR and the corresponding space‐charge‐region capacitance CSCR, which are now directly accessible by FFT IS. Moreover, the width of the space‐charge‐region dSCR could be calculated, which defines the pore wall thickness, i.e. the doping concentration dependent spacing of the curro pores in the hexagonal lattice in which the curro pores grow for all doping concentrations.The critical field strength of the avalanche breakdown – the mechanism of hole‐generation during curro pore growth – could also be calculated from the experimental data. It could be shown that the growth mode of curro pores is based on a constant potential drop at the pore tips, which together with a constant pore tip geometry keeps the maximum field strength Em of the avalanche breakdown process at the pore tips constant. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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