Abstract
The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtainable. These include the space-charge-region (SCR) width, the SCR potential, the capacitance at the pore tips, and the avalanche breakdown field strength. It could be demonstrated that the system adjusts itself in such a way that the potential across the space-charge-region at the pore tips is kept constant within a certain bandwidth of the applied potential. This provides for a constant field strength at the pore tips, ensuring that avalanche breakdown occurs, generating the necessary holes for the electrochemical dissolution of InP.
Highlights
Porous semiconductors have been envisioned for the use in a broad range of applications, and substantial R&D efforts have been made in this direction [1,2,3,4,5,6,7]
This provides for a constant field strength at the pore tips, ensuring that avalanche breakdown occurs, generating the necessary holes for the electrochemical dissolution of InP
The pore wall thickness dwall, on the other hand, strongly depends on the doping concentration ND; it decreases with increasing ND
Summary
Porous semiconductors have been envisioned for the use in a broad range of applications, and substantial R&D efforts have been made in this direction [1,2,3,4,5,6,7]. In the majority of the proposed applications, the detailed morphology of the porous structure is decisive for the functioning of the application. Morphology parameters like pore diameter and shape, pore wall thickness and roughness, or pore density have to be.
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