Intersubband transitions in InxAl(1 − x)N/InyGa(1 − y)N quantum well operating at 1.55 μm

Abstract

In this paper, we theoretically study the effects of doping concentration ND and an external electric field on the intersubband transitions in InxAl(1 − x)N/InyGa(1 − y)N single quantum well by solving the Schrödinger and Poisson equations self-consistently. Obtained results including transition energies, the band structure, and the optical absorption have been discussed. The lowest three intersubband transitions (E2 − E1), (E3 − E1), and (E3 − E2) are calculated as functions of doping concentration ND. By increasing the doping concentration ND, the depletion effect can be reduced, and the ionized electrons will compensate the internal electric field which results from the spontaneous polarization. Our results show that an optimum concentration ND exists for which the transition 0.8 eV (1.55 μm) is carried out. Finally, the dependence of the optical absorption α13(ω) on the external electric field and doping concentration is studied. The maximum of the optical absorption can be red-shifted or blue-shifted through varying the doping concentration and the external electric field. The obtained results can be used for designing optical fiber telecommunications operating at 1.55 μm.