Abstract
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call