Abstract
We report the terahertz (THz) emission spectroscopy (TES) and photoluminescence (PL) spectroscopy results for a semi-insulating (SI) GaN film in comparison with those for unintentionally-doped (UID) and magnesium (Mg)-doped ones. The THz emission polarity showed their band bending near the surface. In addition, the TES and PL results showed intensity changings over time for SI, UID-GaN, but not for Mg-doped GaN. The origin of these effects was studied by observing the THz emission property in the air and vacuum and attributed to the UV- induced hydrogen dissociation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.