Abstract
We report the terahertz (THz) emission spectroscopy (TES) and photoluminescence (PL) spectroscopy results for a semi-insulating (SI) GaN film in comparison with those for unintentionally-doped (UID) and magnesium (Mg)-doped ones. The THz emission polarity showed their band bending near the surface. In addition, the TES and PL results showed intensity changings over time for SI, UID-GaN, but not for Mg-doped GaN. The origin of these effects was studied by observing the THz emission property in the air and vacuum and attributed to the UV- induced hydrogen dissociation.
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