Abstract
We have performed a study to optimize the measurement conditions for SIMS analysis of thin HfSiON films with various nitrogen concentrations, prepared by post-nitridation of HfSiO x . In this study of 2.5 nm thick HfSiON films, we have measured SIMS depth profiles of oxygen and nitrogen under 500 eV Cs + bombardment at approximately 70° from the surface normal, similar to those obtained by HR-RBS. Under the same measurement conditions, good correlation between the estimated nitrogen concentration from XPS and the CsN + secondary ion intensity by SIMS has been observed for nitrogen concentrations less than 15%.
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