Abstract
Samples of boron (B) doped g-C3N4 (BCN) and boron nitride (BN) composite (BN/BCN) were synthesized by a simple in situ technique by varying BN content in the range of 1–10% mass fraction and boron contents are crucial for improving the activity of the composites. The composites were characterized by PXRD and FTIR in order to confirm their successful formation. Prompt Gamma Neutron Activation Analysis (PGNAA) using thermal neutron beam from Dhruva reactor was used for non-destructive determination of total boron concentration by measuring 478 keV prompt gamma-ray from 10B (n, αγ)7*Li reaction. The obtained boron concentrations are in the range of 2.3–6.2% mass fraction.
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