Quality improvement of multi-crystalline silicon ingot by the Hot-Zone modification

Abstract

Directional solidification process is the dominant method for the multi-crystalline silicon wafer production due to the lower production cost, simple operating process and mass production. Numerical simulation is the best tool to understand and enhance the multi-crystalline silicon ingot quality by using the directional solidification process for photovoltaic application. We improved the multi-crystalline silicon ingot quality by adding an additional graphite layer on the hot-zone of directional solidification furnace. We have simulated both modified and conventional directional solidification process and compared the temperature distribution, growth rate and stress distribution of both systems. The modified directional solidification system significantly increases the multi-crystalline silicon ingot quality compared to the conventional directional solidification process grown multi-crystalline silicon ingot. With the modified directional solidification system we have prevented the wall growth during the casting process.