Abstract
A numerical investigation is carried out for the directional solidification (DS) process with various furnace pressures such as 300 mbar, 400 mbar, 500 mbar, and 600 mbar. During the multi-crystalline silicon (mc-Si) ingot growth process, the pressure inside the furnace affects the species' transport. The oxygen and carbon concentrations for various furnace pressures have been analyzed, and the results were compared. In the gas phase, a furnace pressure of less than 500 mbar enhances the strong back diffusion of the species into the silicon melt. The furnace pressure is higher than 500 mbar, which enhances the convection transport of the species in the lab-scale furnace. The optimized furnace pressure (500 mbar) enhances the quality of multi-crystalline silicon ingot. The oxygen concentration and carbon concentration values are reduced when the furnace pressure is around 500 mbar, which reduces the light-induced degradation (LID) effects and SiC precipitation.
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