Abstract
Pb 1.1 (Zr 0.30 Ti 0.70 )O 3 (PZT) and Pb 1.1 (Zr 0.30 Ti 0.70 )O 3 /PbTiO 3 (PZT/PT) multi-layered thin films are grown on Pt/Ti/SiO 2 /Si substrate by sol-gel method. The kinetics of current change of pyroelectric and transient response between PZT and PZT/PT ferroelectric thin films is investigated. The shape of peak in the PZT film is sharp, but that of PZT/PT is broadened. An increase in the peak value of switching current and switching time in the PZT/PT film is observed. The change of pyroelectric and transient current between PZT/PT and PZT films is discussed in terms of internal field.
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