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Abstract
A new pulsed metalorganic chemical vapor deposition (MOCVD) technique has been used to grow quaternary AlxInyGa1-x-yN layers with a high density of localized states on sapphire substrates. These layers show very strong photoluminescence spanning from 320 to 350 nm due to the recombination of carriers (presumably as excitons) localized at the band tail states. We also used the pulsed MOCVD process to deposit quaternary multiple quantum wells with intense emission peak at 331 nm, thereby, making it very attractive for growth of active layers for deep ultraviolet light-emitting diodes.
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