Abstract
The photoconducting properties of PbI2, an indirect band gap crystal have been studied using fundamental and frequency doubled Nd:YAG laser. The ratio of three and two photon absorption cross sections (γ3/γ2) have been calculated experimentally. The value of γ2 has been calculated by third order time dependent perturbation theory and that of γ3 has been estimated by making use of experimental results. Relatively lower values of the absorption cross-sections as compared to those of direct band gap crystals have been attributed to phonon-assisted transitions.
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