Abstract
Ferroelectric Pb(Zr, Ti)O3 thin films were prepared by pulsed excimer laser deposition on silicon-on-insulator and Pt-coated silicon-on-insulator substrates, and rapid thermal annealing was performed to crystallize the films. Based on the analysis by x-ray diffraction, Rutherford backscattering spectroscopy and measurements of electrical properties, the films were revealed to be polycrystalline perovskite structure with mainly (100) and (110) orientations, and their crystallization was found to be dependent on annealing temperature and annealing time. The films show good ferroelectricity, with Pr = 15 μC/cm2, Ec = 50 kV/cm, high resistivity and high dielectric constant.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
