Abstract
Since the discovery of fatigue free La doped Bi4Ti3O12 films, considerable interest has been shown in studying the effects of various other rare earth dopants (e.g. Nd, Sm) on the ferroelectric properties of this material for applications in non-volatile ferroelectric random access memories. We have grown Nd-doped films from a ceramic target of composition Bi3.15Nd0.85Ti3O12 by pulsed laser ablation. Epitaxial films (c-axis and non-c-axis oriented) have been grown on strontium titanate substrates of different crystallographic orientations to study the effect of film orientation on ferroelectric properties. Films have been characterized using X-ray diffraction. Ferroelectric measurements have been performed to investigate the dependence of film properties on crystallographic orientation. †Paper originally presented at 10th European Meeting on Ferroelectricity, Cambridge, U.K., August 3–8, 2003.
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