Abstract
La0.5Sr0.5CoO3/Pb(Zr x Ti1−x)O3/La0.5Sr0.5CoO3 capacitors have been successfully fabricated by liquid delivery metalorganic chemical vapor deposition on Si wafers using SrTiO3 thin layer (20 nm) as a template. Zr(dmhd)4 in tetrahydrofuran was used as Zr precursor for compatible thermal behavior with Pb(thd)2 and Ti(OiPr)2(thd)2 precursors. The dependence of the ferroelectric film composition on the precursor mixing ratio and growth temperature has been systematically studied by Rutherford Backscattering (RBS). Ferroelectric and piezoelectric properties at the composition close to morphotropic phase boundary region (Pb(Zr0.5Ti0.5)O3) have been investigated for application in nonvolatile ferroelectric random access memories and microelectromechanical system (MEMS). These capacitors show desirable ferroelectric properties, which proves that this approach is very promising for both fundamental study and potential applications. The changes of spontaneous polarization (P s ) and piezoelectric coefficient (d33) with Ti/(Zr + Ti) ratio are also presented and compared with theoretical values.
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