Abstract
AbstractSrBi2Nb2O9 (SBN) films were grown by pulsed laser deposition on various substrates suitable for microwaves applications. Pure c‐axis oriented SBN films on (100) MgO and (100) LaAlO3 are epitaxially grown. The crystalline quality evaluated by the rocking curves width is strongly correlated to the film‐substrate mismatch (Δohgr; = 0.9–2° on MgO and Δω = 0.3–0.4° on LaAlO3). SBN growth on sapphire is more complex. In fact, on R‐plane as well as on C‐plane, XRD evidences the coexistence of various orientations of the SBN films. In spite of the coexistence of several orientations epitaxial growth was evidenced, strongly influencing the microstructure.
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