Pulsed ion beam evaporation at low temperature for the preparation of thin films

K Yatsui,R Iwashita,W Jiang,H Suematsu,T Nagahama,N Uchitomi,S.C Yang,T Arikado

doi:10.1109/modsym.2002.1189535

Pulsed ion beam evaporation at low temperature for the preparation of thin films

K Yatsui, R Iwashita + Show 6 more

https://doi.org/10.1109/modsym.2002.1189535

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Publication Date: Jun 30, 2002

Affiliation: Nagaoka University, Nagaoka University of Technology

#Pulsed Ion Beam Evaporation #Ion Beam Evaporation + Show 8 more

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Abstract

Using high-density ablation plasma produced by pulsed ion beam interaction with solid targets, it has been demonstrated by the present authors to prepare thin films at low temperature, which was called ion beam evaporation. In addition to the first preparation of ZnS in 1988, the preparation of many films has been succeeded such as YBCO, (SrBa)TiO/sub 3/, SrAl/sub 2/O/sub 4/:Eu, poly-Si, ITO, and apatite. Since some of them have been already reported elsewhere, some other new results of the preparation of thin films by IBE are presented such as Si-Ge or HfO/sub 2/.

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