Abstract
This paper presents a method to improve the stability of porous silicon structures by electrochemical deposition of silicon capping.Porous silicon is formed by pulse electrochemical etching, followed by pulsed current electrochemical deposition, to provide auniform silicon capping layer on the porous structure. The capping layer thickness and hardness increase with deposition time. Thevariation of strain in the porous structure is also observed with varying silicon capping layer thickness. Silicon capping of 4 mwas sufficient to protect porous silicon from aging effects on their spontaneous emission, while a capping of 7.2 m causes a40 nm redshift on the spectrum.© 2008 The Electrochemical Society. DOI: 10.1149/1.3049861 All rights reserved.Manuscript submitted September 19, 2008; revised manuscript received November 12, 2008. Published December 23, 2008.
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