Abstract
AbstractNitride laser diodes and light emitting diodes were irradiated with 200‐, 80‐ and 10‐MeV protons. The threshold current of violet laser diodes increased with increasing proton fluence to 1 × 1014 p/cm2. The increase in threshold current is considerably small compared with that of AlGaAs laser diodes. Proton energy dependence of the change of threshold current was a little bit different from that of GaN NIEL. Oscillation wavelength did not change before and after irradiation. The defect levels made by proton irradiation do not seem to be radiative recombination centers. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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