Abstract
The degradation behaviors of InAlGaN-based green laser diodes in humid ambients were studied. Nonhermetic laser diodes were aged at three different relative humidity conditions at constant current aging mode. For all nonhermetic devices failure occurred as a result of a large increase in the threshold current and sharp decrease of light output power. The reverse leakage current for the failures did not increase when the threshold current increased and slope efficiency decreased, indicating that the change in the threshold current was a result of a change in internal and/or mirror loss. Besides the threshold current increase, the photoluminescence intensity of the ridge region decreased more than 80% after aging compared with the non-aged companions. The moisture oxidized the p-Ohmic contact region of the semiconductor and caused the increase of the serial resistance. The mirror facet degradation was observed in scanning electron microscope. This led to change in reflectivity and light scattering and eventually to a large shift in the threshold current and slope efficiency of the device.
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