Abstract
Intersubband transition in 3-Me He+-ion or 1 MeV proton irradiated GaAs/AlGaAs multiple quantum wells were studied using optical absorption technique. The intersubband transitions in 3MeV He+-ion irradiated were completely depleted in samples irradiated with doses as low as 1 X 1014 cm-2. Thermal annealing recovery of intersubband transitions was observed in samples irradiated with lower doses while in heavily irradiated samples intersubband transition show no annealing recovery which could be said irradiation induced defects are so severe that annealing temperature could not repair the damage. On the other hand, intersubband transitions in 1 MeV proton irradiated samples were completely depleted with irradiation doses as low as 4 X 1014 cm-2. More than 80 percent recovery was achieved at annealing temperature as low as 650 degrees C. The total integrated area and peak position energy of un-irradiated and irradiated samples were monitored as a function of annealing temperature. Depletion recovery here is noted to depend on the thermal annealing and irradiation dose.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
