Abstract
Intersubband transitions in 3 MeV He+–ion irradiated GaAs–AlGaAs multiple quantum wells were studied using an optical absorption technique. The intersubband transitions were completely depleted in samples irradiated with doses as low as 1×1014 cm−2. Thermal annealing recovery of intersubband transitions was observed in samples irradiated with lower doses. On the other hand, intersubband transitions in heavily irradiated (doses>3×1014 cm−2) samples do not show thermal annealing recovery, which indicates that irradiation-induced defects are so severe that thermal annealing does not repair the damage. The total integrated areas of the intersubband transitions in irradiated samples and in a control sample were monitored as a function of annealing temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.