Abstract
Intersubband transitions in 3 MeV He+–ion irradiated GaAs–AlGaAs multiple quantum wells were studied using an optical absorption technique. The intersubband transitions were completely depleted in samples irradiated with doses as low as 1×1014 cm−2. Thermal annealing recovery of intersubband transitions was observed in samples irradiated with lower doses. On the other hand, intersubband transitions in heavily irradiated (doses>3×1014 cm−2) samples do not show thermal annealing recovery, which indicates that irradiation-induced defects are so severe that thermal annealing does not repair the damage. The total integrated areas of the intersubband transitions in irradiated samples and in a control sample were monitored as a function of annealing temperature.
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