Abstract
Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells (MQWs) were investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. It is observed that proton doses as high as 1×1014 cm−2 do not have a measurable effect on the intensity or the peak position energy of the intersubband transitions. While a dose of 1×1014 cm−2 has shown a detrimental effect on the intersubband transitions in the GaAs/AlGaAs MQWs, the intersubband transitions in InGaAs/InAlAs MQWs withstood proton doses as high as 1×1015 cm−2 and completely depleted after irradiation with a dose of 3×1015 cm−2. Furnace thermal annealing of the heavily irradiated samples shows that the depleted intersubband transitions in InGaAs/InAlAs MQW samples were almost completely recovered.
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