Abstract
AbstractThe field of nitride‐based materials is producing some of the most promising and interesting candidates for advanced technology applications. Novel formulations and polymorphs are of interest for applications requiring one or more of: high hardness, high oxygen resistance at elevated temperatures, catalytic action, semiconductor light sources, and (ultra‐)wide band gap electronics. The synthesis of nitrides with excellent single crystal structural quality of an appreciable size is challenging whether working in solution growth techniques like ammonothermal and flux growth, or in vapor deposition techniques. This paper presents a perspective on recent developments in equipment and techniques for single crystal nitride synthesis with a view toward progress anticipated in the next 5–10 years.
Published Version
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