Abstract
We proposed BeZnTe/ZnSeTe superlattice quasi-quaternaries (SLQQs) as an active layer material replaced with BeZnSeTe quaternaries for yellow/green light emitting devices. BeZnTe/ZnSeTe SLQQs with various layer thickness combinations of BeZnTe and ZnSeTe were grown on InP substrates by a molecular beam epitaxy (MBE). In photoluminescence (PL) measurements at room temperature, high PL intensities were obtained for the SLQQs compared with BeZnSeTe. The peak wavelength was controlled from 589 to 480nm by changing the layer thickness combination (BeZnTe/ZnSeTe) from 1 monolayer (ML)/20ML to 4ML/2ML. Applying the SLQQ for the active layer, LEDs were fabricated on n-type InP substrates. Single-peak yellow electroluminescence at 584nm was observed with the full wave half maximum (FWHM) of 105meV.
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