Abstract
Undoped and doped ferroelectric Lead Germanate thin films were produced by reactive sputtering. The properties of the films are dependent on several production parameters, such as substrate temperature and oxygen partial pressure in the sputter gas. It can be shown, that in the interesting concentration range of the doping materials used (e.g. Si), the production process leads to thin films with properties derivable from those of the bulk material. The results of the investigations, accentuating the ferroelectricity of the films, are presented.
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