Synthesis and characterization of structural properties of Sn1-xMnxO2Thin films prepared by PLD

Abstract

We have reported on the micro-structural properties of pure and Mn doped SnO2 thin films deposited on Si substrate (011) by pulsed laser deposition. Substrate temperature during deposition was kept at 600° C. Target was prepared by solid-state reaction method and doping concentration was kept 0.5% for Sn1-xMnxO2 thin films. X-ray diffraction characterization showed that the undoped and doped films are crystalline in nature. Atomic Force Microscope (AFM) results shows that Mn (0.5%) doped SnO2 the RMS roughness value is 8.36 nm, average roughness 6.60 nm and grain size is 115 nm. Where in pure SnO2 the RMS roughness value is 9.74 nm, roughness average 7.64 nm and grain size is 120 nm. Pure SnO2 thin films are of high roghness with larger grain size as compared to Mn doped SnO2 films. Parameters particle size, lattice constant and crystalline structure of Sn1-xMnxO2 thin films have found to decrease with the doping concentration.We have reported on the micro-structural properties of pure and Mn doped SnO2 thin films deposited on Si substrate (011) by pulsed laser deposition. Substrate temperature during deposition was kept at 600° C. Target was prepared by solid-state reaction method and doping concentration was kept 0.5% for Sn1-xMnxO2 thin films. X-ray diffraction characterization showed that the undoped and doped films are crystalline in nature. Atomic Force Microscope (AFM) results shows that Mn (0.5%) doped SnO2 the RMS roughness value is 8.36 nm, average roughness 6.60 nm and grain size is 115 nm. Where in pure SnO2 the RMS roughness value is 9.74 nm, roughness average 7.64 nm and grain size is 120 nm. Pure SnO2 thin films are of high roghness with larger grain size as compared to Mn doped SnO2 films. Parameters particle size, lattice constant and crystalline structure of Sn1-xMnxO2 thin films have found to decrease with the doping concentration.