Abstract
The dependence of the resistivity and temperature coefficient of resistivity (TCR) of TiN x films on nitrogen pressure is described. The partial nitrogen pressure was varied from 10 −5 Torr to 2×10 −4 Torr. The maximum value of the resistivity (216 μΩ cm) and the lowest negative value of TCR (−33 ppm K −1) were obtained in the nitrogen pressure range (2−4)×10 −5 Torr. The minimum value of the resistivity (44 μΩ cm) and the highest positive value of the TCR (1160 ppm K -1 were obtained in the nitrogen pressure range (4−10)×10 −5 Torr. The influence of aging temperature up to 573 K on the resistance changes are shown. X-ray diffraction analysis indicated the presence of oriented or non-oriented TiN in these films.
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