Abstract
After a short summary of the status of the buried oxide layer in SIMOX structures as of 1994, this paper reviews the developments since then. The main topics are as follows: effects of processing conditions, such as low oxygen dose implantation, additional oxidation; hole-trappng behavior and confinement effects; AFM studies of the BOX and the BOX/Si-substrate interface. It will be shown that both oxide network and defects in the BOX are significantly different from those of thermally grown SiO 2 and depend on the preparation conditions.
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