Anomalous defects in buried oxide of SIMOX structure

Abstract

The structure of the oxide layer formed by implanting 150 keV oxygen ions to a dose range of (1.1–2.0) × 1018 cm−2 is investigated by using TEM. Two kinds of defects are observed in the buried oxide layer: single-crystal silicon islands and bubbles. The distribution of the silicon islands not only depends on the implanting conditions such as dose, but also on the annealing conditions and the way of annealing. The formation processing of the anomalous defects in the oxide layer is also discussed in the paper.