Electrical properties of buried oxide layers of low dose SIMOX structures

V Afanasev,G Brown,A Revesz,W Jenkins,H Hughes,B Aspar,A Auberton-Herve

doi:10.1109/soi.1996.552491

Electrical properties of buried oxide layers of low dose SIMOX structures

V Afanasev, G Brown + Show 5 more

https://doi.org/10.1109/soi.1996.552491

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Publication Date: Sep 30, 1996

Affiliation: KU Leuven, Texas Instruments (United States), MDS Associates (United States), United States Naval Research Laboratory, Atomic Energy and Alternative Energies Commission, CEA Grenoble, CEA LETI

#Oxide Layers #Buried Oxide Layers + Show 8 more

Abstract
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Abstract

Summary form only given. The bulk and defect conduction as well as electron trapping properties of relatively thin (100 nn) buried oxide (BOX) layers of SIMOX structures have been studied with special emphasis on the effects of the capping oxide layer present during the post-implant high temperature annealing.

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