Abstract
AlN thin films were grown at a temperature of 720 °C on (1 1 1) silicon carbide buffer layer deposited in turn on (1 1 1) silicon substrate by introducing Ge at the SiC/Si interface. The growth method used is the solid source molecular beam epitaxy (SSMBE). The morphological and structural properties of the AlN epilayers before and after Ge deposition were studied by atomic force microscopy and X-ray diffraction. It is found that the formation of oriented grain becomes more favorable by increasing Ge quantity at the interface. The surface roughness (RMS) values of the AlN thin films decreases as Ge amount increases at the substrate surface. XRD studies show that wurtzite-type AlN structure with (0 0 0 2) orientation becomes favorable with increase in Ge amount and the full width at half maximum of AlN (0 0 0 2) rocking curve reaches its minimum with 1 ML of Ge concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.