Abstract
The wide band gap II–VI group materials have been extensively studied for optoelectronic applications. The polycrystalline zinc sulphoselenide (ZnSxSe1−x) thin films have been spray deposited onto FTO coated glass substrates at temperature of 275 °C. PEC cells were formed with n-ZnSxSe1−x thin films/1 M (NaOH + Na2S + S)/C configuration to study various photoelectrochemical properties. The study signifies n-type conductivity of ZnSxSe1−x thin films. Significant photoelectrochemical response has been witnessed for the films deposited with x = 0.2 composition. The flat band potential of − 1.09 V has been observed for ZnS0.2Se0.8 thin film. The junction ideality factors in dark and under radiance are found to be 1.37 and 1.32 respectively. ZnS0.2Se0.8 thin films produces 268 mV open circuit voltage and 816 µA cm−2 short circuit current subsequent to efficiency and fill factor of 1.27% and 0.58 respectively. Spectral response characteristics display a sharp peak at 425 nm for x = 0.2, resulting in a band gap of 2.92 eV. These results imply that change in composition ‘x’ has substantial effect on the photovoltaic properties.
Published Version
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