Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature

Abstract

Indium tin oxide (ITO) films were deposited onto the glass substrates at different substrate temperatures (RT-500°C) by rf reactive magnetron sputtering method. The structural, optical and electrical properties of ITO films have been characterized by X-ray diffraction, scanning electron microscopy, optical transmittance and reflectance, sheet resistance and electrical resistivity measurements. The films deposited at low substrate temperature have a very strong (222) diffraction peak which means a preferred orientation along the [111] direction. As the temperature is increased, the (400) diffraction peak intensity increases and results in a preferred orientation along [100] direction for the films prepared at 500°C substrate temperature. The film prepared at 400°C substrate temperature has the lowest electrical resistivity (about 3.7×10 −4 Ω cm).