Abstract
Indium tin Oxide (ITO) with high transparence in visible zone, high reflectivity in near infrared zone, and low resistivity has been widely used in transparent conducting electrodes. In this work, ITO were deposited on the glass substrate (corning Eagle 2000) by reactive rf magnetron sputtering. The microstructure morphology of the ITO films were examined by atomic force microscopy (AFM). The effects of sputtering power, film thickness, and substrate temperature on the optical and electrical properties of ITO films were investigated using UV/Visible spectrophotometer and Hall measurement. Experimental results show that the resistivity of the ITO films is decreaseing with the increase of film thickness and substrate temperature. The transmittance of ITO film is deceaseing with the increase desputtering power and film thickness. In addition, the effects of annealing temperature on the optical and electric properties of ITO film were studied. The transmittance of ITO film is inceaseing with the increase of annealing temperature. The resistivity of ITO films is decreasing with the increase of annealing temperature.
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