Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K

Abstract

The authors have investigated the magnetic properties of heavily Mn-doped ferromagnetic semiconductor Ga1−xMnxAs thin film with the Mn concentration x of 15.2% grown by molecular-beam epitaxy at relatively high growth temperature of 250 °C. Magnetic circular dichroism and the anomalous Hall effect measurements indicate that this thin film holds the intrinsic ferromagnetic semiconductor features. By low-temperature annealing, the resistivity was significantly decreased and the Curie temperature was largely enhanced from 95 K to 172.5 K.