Abstract
The authors have studied the magneto-optical and magnetotrasnport properties of Ga1−xMnxAs thin films with high Mn concentrations (x=12.2%–21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150–190°C and by reducing the film thickness to 10nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature up to 170K.
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