Abstract
We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga 1−x ,Fe x )Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy (LT-MBE). Our crystal structure analysis by scanning transmission electron microscopy (STEM) indicates that the (Ga 1−x ,Fe x )Sb thin films maintain the zinc-blende crystal structure at x = 25%. The intrinsic ferromagnetism was confirmed by magnetic circular dichroism (MCD) spectroscopy and anomalous Hall effect (AHE) measurements. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III–V ferromagnetic semiconductors.
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