Abstract
We report about properties of carbon layers doped with Er3+ ions fabricated by Plasma Assisted Chemical Vapor Deposition (PACVD) and by sputtering on silicon or glass substrates. The structure of the samples was characterized by X-ray diffraction and their composition was determined by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The Absorbance spectrum was taken in the spectral range from 400 nm to 600 nm. Photoluminescence spectra were obtained using two types of Ar laser (λex=514.5 nm, lex=488 nm) and also using a semiconductor laser (λex=980 nm). Samples fabricated by magnetron sputtering exhibited typical emission at 1530 nm when pumped at 514.5 nm.
Highlights
Carbon thin films have attracted the attention of various investigators due to their unique optical, electrical and mechanical properties [1]
We report on carbon layers doped with erbium ions deposited by sputtering, by Plasma Assisted Chemical Vapor Deposition (PACVD) and by magnetron sputtering onto a silicon or glass substrate
When the carbon samples were fabricated by sputtering the content of erbium ions was too low to reveal the photoluminescence at 1 530 nm
Summary
Carbon thin films have attracted the attention of various investigators due to their unique optical, electrical and mechanical properties [1]. Er3+-doped optical materials are candidates for fabricating optical amplifiers or lasers operating at 1530 nm [6, 7, 8], due to Er3+ intra-4f emission, which corresponds to 4I13/2 ® 4I15/2 transition. This wavelength is commonly used in telecommunication system, due to the fact that it corresponds to the low loss window of silica-based optical fibers. The articles report on fabricating erbium doped carbon layers by using magnetron sputtering on a silicon substrate. In this paper we will report on our attempts to fabricate carbon layers with erbium content higher than those in the papers mentioned above
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