Abstract
We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering onsilicon, quartz and Corning glass substrates. For fabricating GaN layers two types of targets were used - gallium in a stainless steel cup anda Ga2O3 target. Deposition was carried out in the Ar+N2 gas mixture. For erbium and ytterbium doping into GaN layers, erbium metallicpowder and ytterbium powder or Er2O3 and Yb2O3 pellets were laid on the top of the target. The samples were characterized by X-raydiffraction (XRD), photoluminescence spectra and nuclear analytical methods. While the use of a metallic gallium target ensured thedeposition of well-developed polycrystalline layers, the use of gallium oxide target provided GaN films with poorly developed crystals. Bothapproaches enabled doping with erbium and ytterbium ions during deposition, and typical emission at 1 530 nm due to the Er3+ intra-4f 4I13/2 → 4I15/2 transition was observed.
Highlights
Gallium nitride (GaN) has become one of the most promising wide band gap (3.4 eV) direct semiconductor materials for utilization in high power and high frequency transistors, solid state photo detectors and high brightness blue light emitting diodes (LEDs), laser diodes (LDs) and full colour flat panel displays [1], [2]
RE-doped GaN layers fabricated by the epitaxy method are of high quality; the deposition process is rather complicated
For erbium doping into gallium nitride layers, the Er metallic powder and Yb powder were laid on the top of gallium targets, or, Er metallic powder and Yb powder or Er2O3 and Yb2O3 pellets 5 or 10 mm in diameter were put on top of the Ga2O3 targets
Summary
Gallium nitride (GaN) has become one of the most promising wide band gap (3.4 eV) direct semiconductor materials for utilization in high power and high frequency transistors, solid state photo detectors and high brightness blue light emitting diodes (LEDs), laser diodes (LDs) and full colour flat panel displays [1], [2]. When only Er3+ ions are present in short waveguides, optical pumping at 980 nm is not sufficiently efficient, because the Er3+ absorption cross-section at this wavelength is not very good This problem can be overcome by adding Yb3+, as its 2F5/2® 2F7/2 transition is approximately ten times stronger than that of 4I13/2 ® 4I15/2 [4], [5]. RE-doped GaN layers fabricated by the epitaxy method are of high quality; the deposition process is rather complicated (for GaN fabricated by MOCVD a toxic precursor is needed, and for GaN fabricated by MBE an ultrahigh-vacuum chamber must be applied). Instead of these rather complicated methods an easier approach to GaN fabrication is being investigated. Sputter deposition is relatively inexpensive and it is ideal for covering a large area
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