Abstract

Yttrium iron garnet, Y3Fe5O12, films of excellent purity were grown onto Gd3Ga5O12 substrates by liquid phase epitaxy from a lead-free BaO–B2O3–BaF2 flux. The aim of using the BaO flux was to reduce the content of impurities and intrinsic defects in the garnet films and to obtain samples with minimum microwave losses. The films were characterized by the nuclear magnetic resonance (NMR), ferromagnetic resonance, and parallel pumping method. The NMR spectra demonstrated a considerable reduction of impurity concentration compared to garnet films produced from a conventional PbO–B2O3 flux. Likewise, the NMR and spin wave linewidths of BaO-grown films were very narrow comparable with results obtained on the best (111) films and bulk samples.

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