Abstract
The optical and electrical properties of molecular beam epitaxial layers of CdTe grown on InSb(001) substrates at 200–225 °C and either doped with copper, arsenic, antimony or indium or undoped were investigated. Non-intentionally doped layers are found to be n type and to contain indium and antimony atoms out diffused from the substrates. For copper- and arsenic-doped layers, acceptor-bound exciton annihilation lines become dominant in the exciton region of the photoluminescence spectra at 6 K, whereas for antimony-doped layers the acceptor-bound exciton line remains weaker than the donor exciton line even at antimony concentrations of up to 1.2 × 10 18 cm -3. P-type conduction was observed only in heavily copper-doped samples.
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